Increased monolayer domain size and patterned growth of tungsten disulfide through controlling surface energy of substrates

We report a surface energy-controlled low-pressure chemical vapor deposition growth of WS2 monolayers on SiO2 using pre-growth oxygen plasma treatment of substrates, facilitating increased monolayer surface coverage and patterned growth without lithography. Oxygen plasma treatment of the substrate caused an increase in the average domain size of WS2 monolayers by 78% ± 2% while having a slight reduction in nucleation density, which translates to increased monolayer surface coverage. This substrate effect on growth was exploited to grow patterned WS2 monolayers by patterned plasma treatment on patterned substrates and by patterned source material with resolutions less than 10 μm. Contact anglebased surface energy measurements revealed a dramatic increase in polar surface energy. A growth model was proposed with lowered activation energies for growth and increased surface diffusion length consistent with the range of results observed. WS2 samples grown with and without oxygen plasma were similar high quality monolayers verified through transmission electron microscopy, selected area electron diffraction, atomic force microscopy, Raman, and photoluminescence measurements. This technique enables the production of large-grain size, patterned WS2 without a post-growth lithography process, thereby providing clean surfaces for device applications.